Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1991-06-18
1993-11-02
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257273, 257412, 257754, H01L 2702, H01L 2904
Patent
active
052586332
ABSTRACT:
A semiconductor body (1) defines at least one active device. In the example shown in FIG. 1 complementary n channel and p channel IGFETs (10 and 20) are provided. An electrically conductive region, which may form the gate conductive region (101 and 102) of the insulated gates (11 and 21) of an IGFET, is provided on a first major surface (2) of the semiconductor body (1) and is encapsulated within a covering insulating region (300,400). An area (100a) of the electrically conductive region (101 and 102) contacts a relatively highly doped semiconductor region (50) provided adjacent the one major surface (2) and electrical contact is made to the electrically conductive region (101 and 102) via a conductive track (205) provided on the first major surface (2) and a conductive path provided by the relatively highly doped semiconductor region (50). It is thus not necessary to form a contact opening through the covering insulating region (300,400) to enable contact to the electrically conductive region (101 and 103) and accordingly electrical interconnections can overlap or cross over the encapsulated electrically conductive region (101 and 102).
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IBM Technical Disclosure Bulletin, vol. 32, #6B, Nov. 1989, "Double Poly Buried Contact Process".
Biren Steven R.
Hille Rolf
Saadat Mahshid
U.S. Philips Corp.
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