Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1994-06-30
1995-11-14
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257328, 257355, H01L 2910, H01L 2978
Patent
active
054669529
ABSTRACT:
A semiconductor body (2) has first and second major surfaces (2c and 2d) with a first region (2b) of one conductivity type adjacent the first major surface (2c). An insulated gate field effect transistor (6) is formed within the first region (2c) and has source and drain electrodes (S and D) and an insulated gate electrode (G). At least one further component (R4) is coupled between the insulated gate electrode (G) of the insulated gate field effect transistor (6) and a gate input terminal (GT). The further region requires a second region (21) of the opposite conductivity type provided within the first region (2b) so that a region (26) of the further component (R4), the second region (21) and the first region (2b) form a parasitic bipolar transistor (B). An insulating layer (30) on the first major surface (2c) carries a first rectifying element (D1) coupled between the base region (8) of the parasitic bipolar transistor (B) and the gate input terminal (GT) and a second rectifying element (D2) coupled between the emitter region (26) of the parasitic bipolar transistor (B) and the gate input terminal (GT) for causing, when the voltage difference between the source and insulated gate electrodes (S and G) reverses sign, the first and second rectifying elements (D1 and D2) in series with the base and emitter regions of the parasitic bipolar transistor (B) to become forward-biassed to reduce the voltage between the base and emitter regions of the parasitic bipolar transistor (B) to inhibit turn-on of the parasitic bipolar transistor.
REFERENCES:
patent: 4760434 (1988-07-01), Tsuzuki et al.
patent: 5352915 (1994-10-01), Hutchings et al.
Biren Steven R.
Hardy David B.
Limanek Robert P.
U.S. Philips Corporation
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