Semiconductor device having an epitaxial substrate and a fabrica

Details Semiconductor device having an epitaxial substrate and a fabrica Semiconductor device having an epitaxial substrate and a fabrica

1998-05-08

2000-03-14

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

257504, 257506, 257509, 257519, H01L 2972

Patent

active

060376473

ABSTRACT:
A semiconductor device formed on an epitaxial substrate includes a high-resistance region in the vicinity of an interface between a doped semiconductor substrate and an epitaxial layer thereon. The high-resistance region is advantageously formed by an ion implantation process of a dopant opposite to a dopant contained in the doped semiconductor substrate such that there is formed a depletion of carriers in the vicinity of the foregoing interface.

REFERENCES:
patent: 5241210 (1993-08-01), Nakagawa et al.
patent: 5895953 (1999-04-01), Beasom

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