Semiconductor device having an electroluminescent diode

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357 16, 357 63, 357 91, H01L 3300

Patent

active

046461167

ABSTRACT:
A semiconductor device includes an electroluminescent diode, which is obtained from at least one epitaxial layer of a III-V compound vapor-deposited on a substrate which is also of a III-V compound. The invention is characterized in that, preferably before the epitaxial layer is vapor deposited, a layer having a disturbed crystal structure is provided at the surface of the substrate, as a result of which the substrate does not generate radiation.

REFERENCES:
patent: 4414558 (1983-11-01), Nishizawa et al.

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