Patent
1984-11-28
1987-02-24
Davie, James W.
357 16, 357 63, 357 91, H01L 3300
Patent
active
046461167
ABSTRACT:
A semiconductor device includes an electroluminescent diode, which is obtained from at least one epitaxial layer of a III-V compound vapor-deposited on a substrate which is also of a III-V compound. The invention is characterized in that, preferably before the epitaxial layer is vapor deposited, a layer having a disturbed crystal structure is provided at the surface of the substrate, as a result of which the substrate does not generate radiation.
REFERENCES:
patent: 4414558 (1983-11-01), Nishizawa et al.
Mahieu Marc
Martin Marie-Josephe
Varon Jacques J.
Biren Steven R.
Davie James W.
Epps Georgia Y.
Mayer Robert T.
U.S. Philips Corporation
LandOfFree
Semiconductor device having an electroluminescent diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having an electroluminescent diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an electroluminescent diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-111779