Semiconductor device having an electrically conductive layer inc

Details Semiconductor device having an electrically conductive layer inc Semiconductor device having an electrically conductive layer inc

1994-12-19

1997-02-04

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257413, 257755, 257900, 427579, H01L 27082, H01L 2976, H01L 2348, H01L 27088

Patent

active

056001770

ABSTRACT:
The upper and lateral surfaces of a polycide electrode comprising a P.sup.+ -type polycrystalline silicon layer 6 and a tungsten silicide layer 13 are covered with silicon nitride films 9, 9A. Reduction of the boron concentration at the interface between the lower polycrystalline silicon layer and the upper tungsten silicide layer is suppressed.

REFERENCES:
patent: 4990365 (1991-02-01), Treichel et al.
patent: 5121184 (1992-06-01), Huang et al.
Fujii, Toyokazu et al., "Dual (n /p ) Polycide Interconnect Technology using poly-Si/WSi2/Poly-Si Structure and Post B Implantation", IEEE, 1992, pp. 845-848.

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