Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-02-14
2006-02-14
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S069000, C257S070000
Reexamination Certificate
active
06998641
ABSTRACT:
In order to solve the problem of inferior gettering efficiency in the n-channel TFT, the present invention provides at an end of the source/drain regions of the n-channel TFT a highly efficient gettering region that contains both of an n-type impurity and a p-type impurity with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.
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Makita Naoki
Matsuo Takuya
Nakazawa Misako
Ohnuma Hideto
Costellia Jeffrey L.
Lee Eddie
Nixon & Peabody LLP
Owens Douglas W.
Semiconductor Energy Laboratory Co,. Ltd.
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