Semiconductor device having an amorphous metal layer contact

Details Semiconductor device having an amorphous metal layer contact Semiconductor device having an amorphous metal layer contact

1979-10-04

1982-09-21

James, Andrew J.

357 65, 357 68, 357 71, 357 2, H01L 2348, H01L 2946, H01L 2962

Patent

active

043509940

ABSTRACT:
Ohmic contacts for high temperature semiconductor devices comprising a layer strongly bonded to the surface of the semiconductor in the form of an alloy of a metal in the amorphous state in which the metal is a transition metal or a refractory metal having a recrystallization temperature from the amorphous state in excess of 200.degree. C.

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patent: 3664874 (1972-05-01), Epstein
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patent: 3746944 (1973-07-01), Naraoka et al.
patent: 3877049 (1975-04-01), Buckley
patent: 3886577 (1975-05-01), Buckley
patent: 4177475 (1979-12-01), Holmberg
patent: 4181913 (1980-01-01), Thornburg
patent: 4224115 (1980-09-01), Nara et al.

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