Semiconductor device having an amorphous metal layer contact

Details Semiconductor device having an amorphous metal layer contact Semiconductor device having an amorphous metal layer contact

1982-09-17

1985-01-15

James, Andrew J.

357 2, 357 71, 357 65, 357 68, H01L 2912, H01L 2354

Patent

active

044941366

ABSTRACT:
A metallization system for high temperature use comprises a layer strongly bonded to the surface of a semiconductor substrate in the form of an alloy of a metal in the amorphous state in which the metal is a transition metal, transition metal
ormal metal alloy or transition metal/metalloid alloy having a crystallization temperature from the amorphous state in excess of 200.degree. C. The as-deposited amorphous films exhibit good adhesion and show at least an order of magnitude improvement in corrosion protection compared to polycrystalline coatings. Annealing treatments below the glass transition temperature have been found to further enhance this protective behavior of the amorphous films.

REFERENCES:
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patent: 3607240 (1971-09-01), Kunert et al.
patent: 3664874 (1972-05-01), Epstein
patent: 3675090 (1972-07-01), Neale
patent: 3746944 (1973-07-01), Naraoka et al.
patent: 3886577 (1975-05-01), Buckley
patent: 4177475 (1979-12-01), Holmberg
patent: 4181913 (1980-01-01), Thornburg
patent: 4350994 (1982-09-01), Perepezko et al.

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