Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2006-01-24
2006-01-24
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S194000, C257S189000
Reexamination Certificate
active
06989553
ABSTRACT:
An active region30is formed on a substrate3, which is made of SiC, GaN, or GaAs, for example, by alternately layering undoped layers22with a thickness of for example about 50 nm and n-type doped layers23with a thickness (for example, about 10 nm) that is thin enough that quantum effects can be achieved. Carriers spread out into the undoped layers22from sub-bands of the n-type doped layers23that occur due to quantum effects. In the undoped layers22, which have a low concentration of impurities, the scattering of impurities is reduced, and therefore a high carrier mobility can be obtained there, and when the entire active region30has become depleted, a large withstand voltage value can be obtained due to the undoped layers22by taking advantage of the fact that there are no more carriers in the active region30.
REFERENCES:
patent: 3739243 (1973-06-01), Semichon et al.
patent: 4882609 (1989-11-01), Schubert et al.
patent: 5488237 (1996-01-01), Kuwata
patent: 5493136 (1996-02-01), Matsuzaki et al.
patent: 6388272 (2002-05-01), Odekirk
patent: 6479842 (2002-11-01), Kano
patent: 0555886 (1993-08-01), None
patent: 0612104 (1994-08-01), None
patent: 54-132173 (1979-10-01), None
patent: 5-13446 (1993-01-01), None
patent: 05-13446 (1993-01-01), None
patent: 06310536 (1994-11-01), None
patent: 6-349860 (1994-12-01), None
patent: 9-289216 (1997-11-01), None
patent: WO 01/67521 (2001-09-01), None
patent: WO 01/93339 (2001-12-01), None
Preliminary Manuscript of the 45thLecture Presentation by Japan Society of the Applied Physics, vol. No. 1, p. 422, 30p-YG-4, Mar. 28, 1998.
Notice of Reasons of Rejection for Japanese Patent App. No. 2001-566193 mailed Sep. 16, 2003, and English translation.
D.W. Van der Weide, “Delta-doped Schottky diode nonlinear transmission lines for 480-fs, 3.5-V transients,” Applied Physics Letters, vol. 65, No. 7, Aug. 15, 1994, pp. 881-883.
A. Konstantinov, et al., “Investigation of lo-hi-lo and delta-doped silicon carbide structures”, Mat. Res. Soc. Symp. Proc. vol. 640, 2001, pp. H2.4.1-6.
Shui Jinn Wang, et al., “Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells”, Jpn. J. Appl. Phys. vol. 33, No. 4B, Part 1, Apr., 1994, pp. 2429-2434.
W.C. Hsu, et al., “A Quantum Well- doped GaAs Fet Fabricated by Low-Pressue Metal Organic Chemical Vapro Deposition”, Solid-State Electronics, vol. 34, No. 6, Jun. 1, 1991, pp. 649-653.
S.M. Bedair, “Selective-area and sidewall growth by atomic layer epitaxy”, Semiconductor Science and Technology, vol. 8, No. 6, Jun. 1, 1993, pp. 1052-1062.
European Patent Publication No. EP 0 309 290 A1.
“Characterization of Double Pulse-Doped Channel GaAs MESFET's”, Shigeru Nakajima, et al., IEEE Electron Device Letters, vol. 14, No. 3, Mar. 1993, pp. 146-148.
“Stark Effect Studied in -doped GaAs Structures”, A. Ben Jazia, et al., Semicond. Sci. Technol. 12 (1997), pp. 1388-1395.
“Vertical Hot-Wall Type CVD for SiC Growth”, Kunimasa Takahashi, et al., Materials Science Forum Vols. 338-342 (2000), pp. 141-144.
“Electronic Properties of Nitrogen Delta-Doped Silicon Carbide Layers”, Toshiya Yokogawa, et al., Mat. Res. Soc. Symp. Proc. vol. 640 (2001), pp. H2.5.1-H2-5-6.
Partial Supplementary European Search Report EP 00 97 6350, Dec. 20, 2002.
Kitabatake Makoto
Kusumoto Osamu
Takahashi Kunimasa
Uenoyama Takeshi
Yokogawa Toshiya
Cao Phat X.
Harness & Dickey & Pierce P.L.C.
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