Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-10-23
2007-10-23
Toledo, Fernando L. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S194000, C257S195000, C257S197000, C257S198000, C438S142000, C438S172000, C438S180000, C438S197000, C438S585000
Reexamination Certificate
active
09813304
ABSTRACT:
The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.
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Ikeda Yoshito
Inoue Kaoru
Masato Hiroyuki
Matsuno Toshinobu
Nishi Katsunori
Matsushita Electric - Industrial Co., Ltd.
Nixon & Peabody LLP
Studebaker Donald R.
Toledo Fernando L.
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