Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-09-03
1998-06-30
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257347, 257607, H01L 2976, H01L 31036, H01L 31112
Patent
active
057738475
ABSTRACT:
A semiconductor device having a active layer comprising crystalline silicon, said active layer comprising a first layer comprising crystalline silicon formed on an insulating surface and a second layer comprising crystalline silicon formed on said first layer, wherein said first layer contains a metal element at a first concentration while said second layer is free from said metal element or contains said metal element at a second concentration which is lower than said first concentration.
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Ferguson Jr. Gerald J.
Ngo Ngan V.
Semiconductor Energy Laboratory Co,. Ltd.
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