Coherent light generators – Particular active media – Semiconductor
Patent
1991-05-03
1993-04-13
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
H01S 319
Patent
active
052028950
ABSTRACT:
A semiconductor laser device comprises a compound semiconductor substrate, a first cladding layer formed on the substrate, an active layer formed on the first cladding layer, made of In.sub.1-y (Ga.sub.1-x Al.sub.x).sub.y P material (0.ltoreq.x<1, 0.ltoreq.y<1), and a second cladding layer formed on the active layer. These first cladding layer, the active layer, and the second cladding layer forms a double heterostructure. A lattice constant of the active layer is larger than that of the substrate by 0.3% or more. The lattice constants of the first and second cladding layers are substantially equal to that of the substrate.
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Hatakoshi Gen-ichi
Ishikawa Masayuki
Nishikawa Yukie
Nitta Koichi
Okajima Masaki
Davie James W.
Kabushiki Kaisha Toshiba
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