Semiconductor device having aluminum contacts or vias and method

Details Semiconductor device having aluminum contacts or vias and method Semiconductor device having aluminum contacts or vias and method

1998-10-05

2000-12-05

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257759, 257760, 257761, 257765, 257774, H01L 2348, H01L 2352, H01L 2940

Patent

active

061570826

ABSTRACT:
A semiconductor device and a method of manufacture therefor. The semiconductor device includes: (1) a substrate having a recess therein, (2) an aluminum-alloy layer located over at least a portion of the substrate and filling at least a portion of the recess and (3) a protective metal layer at least partially diffused in the aluminum-alloy layer, the metal protective layer having a high affinity for oxygen and acting as a sacrificial target for oxygen during a reflow of the aluminum-alloy layer.

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