Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-04-18
2006-04-18
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S712000, C257S713000, C257S737000, C257S786000, C257S690000
Reexamination Certificate
active
07030496
ABSTRACT:
A semiconductor device includes a semiconductor substrate; an aluminum electrode disposed on the substrate; a protection film disposed on the aluminum electrode; an opening disposed on the protection film for exposing the aluminum electrode; and a metal electrode disposed on a surface of the aluminum electrode through the opening. The aluminum electrode includes a concavity disposed under the opening. The aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity. The surface of the aluminum electrode includes multiple concavities and multiple convexities.
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Kondo Ichiharu
Miura Shoji
Shinyama Keiji
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