Semiconductor device having aluminum and metal electrodes...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S712000, C257S713000, C257S737000, C257S786000, C257S690000

Reexamination Certificate

active

07030496

ABSTRACT:
A semiconductor device includes a semiconductor substrate; an aluminum electrode disposed on the substrate; a protection film disposed on the aluminum electrode; an opening disposed on the protection film for exposing the aluminum electrode; and a metal electrode disposed on a surface of the aluminum electrode through the opening. The aluminum electrode includes a concavity disposed under the opening. The aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity. The surface of the aluminum electrode includes multiple concavities and multiple convexities.

REFERENCES:
patent: 4470063 (1984-09-01), Arakawa et al.
patent: 5287003 (1994-02-01), Van Andel et al.
patent: 5289036 (1994-02-01), Nishimoto
patent: 5290732 (1994-03-01), Kumar et al.
patent: 6693350 (2004-02-01), Teshima et al.
patent: 2003/0022464 (2003-01-01), Hirano et al.
patent: 2004/0066630 (2004-04-01), Whittenburg et al.
patent: A-56-153322 (1981-11-01), None
patent: A-57-39548 (1982-03-01), None
patent: A-63-305532 (1988-12-01), None

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