Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1999-11-04
2000-11-21
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 94, 257 12, 257 13, H01L 3300
Patent
active
061506745
ABSTRACT:
A semiconductor device includes a substrate formed of Al.sub.x Ga.sub.1-x N (0<x<1) and a first semiconductor layer provided on the substrate and formed of a III-group nitride semiconductor containing Al. The difference between an Al ratio of the substrate and an Al ratio of the first semiconductor layer is less than about 0.15.
REFERENCES:
patent: 5247533 (1993-09-01), Okazaki et al.
"HVPE GaN and AIGaN 'Substrates' for Homoepitaxy", by Melnik, et al., in Materials Science Forum vols. 264-268 (1998), pp. 1121-1124.
"Novel AIN/GaN Insulated Gate Heterostructure Field Effect Transistor with Modulation Doping and One-Dimensional Simulation of Charge Control" , by Imanaga, et al., in J. Appl. Phys. 82 (11), Dec. 1, 1997, pp. 5843-5858.
"InGaN/GaN/AIGaN-based Laser Diodes with Modulation-Doped Strained-Layer Superlattices Grown on an Epitaxially Laterlly Overgrown GaN Substrate", by Nakamura, et al., in Appl. Phys. Lett. 72 (2) Jan. 12, 1998, pp. 211-213.
"AIxGa1-2N Based Materials and Heterostructures", by Kung, et al., in Mat. Res. SOc. SYmp. Proc. vol. 449, 1997, Materials Research Society, pp. 79-84.
Imafuji Osamu
Nakamura Shinji
Orita Kenji
Yuri Masaaki
Kelly Michael K.
Matsushita Electronics Corporation
Tran Minh Loan
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