Semiconductor device having Al-Mn or Al-Mn-Si alloy electrodes

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 65, 357 71, 427 90, 428653, H01L 2348, H01L 2940, H01L 2348, H01L 2946

Patent

active

040245675

ABSTRACT:
A semiconductor device has a conductive layer for wiring which is made of an Al alloy containing Mn in an amount greater than 1 percent by weight and below 6 percent by weight. The semiconductor device has excellent corrosion resistance, and has a high reliability.

REFERENCES:
patent: 3570001 (1971-03-01), Papendrecht et al.
patent: 3607479 (1971-09-01), Murrmann
patent: 3633076 (1972-01-01), Arndt
patent: 3922385 (1975-11-01), Konantz et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device having Al-Mn or Al-Mn-Si alloy electrodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having Al-Mn or Al-Mn-Si alloy electrodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having Al-Mn or Al-Mn-Si alloy electrodes will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1838349

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.