Semiconductor device having a wiring strip of noble metal and pr

Details Semiconductor device having a wiring strip of noble metal and pr Semiconductor device having a wiring strip of noble metal and pr

1992-11-27

1994-03-15

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257758, 257751, 257770, 257774, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

052948366

ABSTRACT:
A multi-level wiring structure interconnects circuit components of an integrated circuit fabricated on a semiconductor substrate, and comprises a lower wiring of noble metal covered with an inter-level insulating film, an upper wiring of noble metal extending over the inter-level insulating film, and an inter-level wiring implemented by a tube-shaped metal film filled with a piece of noble metal and passing through the inter-level insulating film for interconnecting the lower and upper wirings so that an electric signal is propagated at high speed without sacrifice of resistivity against migration phenomena.

REFERENCES:
patent: 3304362 (1967-02-01), August
patent: 3483610 (1969-12-01), Campo
patent: 4121241 (1978-10-01), Drake et al.
patent: 4835593 (1989-05-01), Arnold et al.
patent: 4872050 (1989-10-01), Okamoto et al.
patent: 4970574 (1990-11-01), Tsunenari
patent: 5025303 (1991-06-01), Brighton

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