Semiconductor device having a well electrically insulated from t

Details Semiconductor device having a well electrically insulated from t Semiconductor device having a well electrically insulated from t

1991-08-30

1993-06-15

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

257368, 257369, 257379, 257610, H01L 2702, H01L 29167

Patent

active

052201910

ABSTRACT:
The semiconductor device comprises a semiconductor substrate 11; a semiconductor layer 12 different in conductivity type from and lower in oxygen concentration than the semiconductor substrate, and formed uniformly on the substrate; a well region 13 different in conductivity type from the semiconductor layer and formed into an island shape in the semiconductor layer so that the bottom surface thereof is 1 to 20 .mu.m away from the surface of the substrate; and both or either of a MOS transistor or a capacitance formed in the semiconductor layer or the well region so as to be electrically insulated from the substrate.

REFERENCES:
patent: 4970568 (1990-11-01), Hiraguchi et al.
patent: 5065212 (1991-11-01), Ohata et al.

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