Semiconductor device having a waveguide structure

Details Semiconductor device having a waveguide structure Semiconductor device having a waveguide structure

1989-09-25

1992-04-21

James, Andrew J.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 17, 372 45, H02L 2712

Patent

active

051073064

ABSTRACT:
A first doped region (20) is grown on a semiconductor substrate (1) as a superlattice region having alternate layers (21, 22) of a first and second semiconductor material followed by a waveguide region (30) having at least a superlattice region with alternate layers (31, 32) of the first and second semiconductor materials. A second doped region (40) is then grown as a superlattice including alternate layers (41, 42) of the first and second semiconductor materials on the waveguide region (30). The first and second doped regions (20 and 40) are grown so that the layers (21, 22, 41, 42) of the first and second semiconductor materials are sufficiently thin and are sufficiently highly doped as to become disordered during growth so that the first and second doped regions (20 and 40) are formed by an alloy of the first and second semiconductor materials having a lower refractive index and larger bandgap than the waveguide superlattice region (30). The device may be a semiconductor laser and the waveguide region (30) may be formed as two superlattice regions (30a, 30b) separated by an active region (50) of the laser.

REFERENCES:
patent: 4439782 (1984-03-01), Holonyak, Jr.
patent: 4654090 (1987-03-01), Burnham et al.
patent: 4671830 (1987-06-01), Burnham
patent: 4731789 (1988-03-01), Thornton
patent: 4860297 (1989-08-01), Hayakawa et al.
patent: 4905246 (1990-02-01), Hayakawa et al.
Coleman et al., "High-barrier cluster-free Al.sub.x Ga.sub.1-x As-AlAs-GaAs quantum-well heterostructure laser," Applied Physics Letters 38(2), Jan. 1981, pp. 63-65.

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