Semiconductor device having a vertical channel of carriers

Details Semiconductor device having a vertical channel of carriers Semiconductor device having a vertical channel of carriers

1991-04-09

1993-05-18

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257264, 257266, 2571831, H01L 2782, H01L 2980, H01L 31072

Patent

active

052124045

ABSTRACT:
A semiconductor device comprises a substrate having a stepped upper major surface, an emitter layer of a semiconductor material provided on the stepped upper major surface of the substrate and having a corresponding stepped upper major surface, a base layer provided on stepped upper major surface of the emitter layer and comprising a plurality of channels of carriers and a plurality of control regions for controlling the passage of carriers through the control regions, and a collector layer of a semiconductor material provided on the base layer for collecting the carriers that have passed through the channels. Each channel extends from the emitter layer to the collector layer, and at least one channel and one control region are provided adjacent with each other in correspondence to each step of the upper major surface of the emitter layer.

REFERENCES:
patent: 4378629 (1983-04-01), Bozler et al.
patent: 4758534 (1988-07-01), Derkits, Jr. et al.
patent: 4785340 (1988-11-01), Nakagawa et al.
patent: 4872046 (1989-10-01), Morkoc et al.
patent: 4903090 (1990-02-01), Yokoyama
patent: 4937204 (1990-06-01), Ishibashi et al.
patent: 5032538 (1991-07-01), Bozler et al.
IBM Technical Disclosure Bulletin, vol. 31, No. 5 Oct. 1988, "Multiple Grid Permeable Transistor", pp. 40-43.

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