Semiconductor device having a two-layer gate structure

Details Semiconductor device having a two-layer gate structure Semiconductor device having a two-layer gate structure

1990-11-14

1991-07-23

Carroll, J.

357 6, 357 235, 357 2315, H01L 4902, H01L 2968, H01L 2978, H01L 2934

Patent

active

050347985

ABSTRACT:
A semiconductor device is disclosed, which comprises source and drain regions formed in a spaced-apart relation to each other on an isolated semiconductor substrate surface, a first conductive layer formed over a channel region between the source and drain regions via a gate insulating film and serving as a floating gate electrode, a two-layer insulating layer formed on the first conductive layer and consisting of a silicon oxynitride film and a silicon oxide film, and a second conductive layer formed on the two-layer insulating layer and serving as a control gate electrode. In the semiconductor device of this structure, the silicon oxynitride film traps fewer electrons, and electrons are infrequently trapped at the time of data erasing, so that data-erasing characteristics can be improved. Further, since fewer electrons are trapped, unlike the prior art insulating layer utilizing a silicon nitride film, there is no need for providing any silicon oxide film on each side, and with the two-layer structure consiting of the silicon oxynitride film and a silicon oxide film it is possible to obtain sufficient insulation and film thickness reduction.

REFERENCES:
patent: 3992701 (1976-11-01), Abbas et al.
patent: 4495693 (1985-08-01), Iwahashi et al.
patent: 4630086 (1986-12-01), Sato et al.
patent: 4683554 (1987-07-01), Lockwood et al.
T. C. Penn, "New Methods of Processing Silicon Series", Science, vol. 208 (May 1980) pp. 923-926.

Affiliated with

Also associated with

Rating

Semiconductor device having a two-layer gate structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a two-layer gate structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a two-layer gate structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-436486