Semiconductor device having a trench for isolating elements and

Details Semiconductor device having a trench for isolating elements and Semiconductor device having a trench for isolating elements and

1996-01-18

1997-10-07

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257510, 257520, 257622, H01L 2906

Patent

active

056751737

ABSTRACT:
The opening width of an element isolating trench is Wa'. The opening width of a substrate potential setting trench is Wb'. When the maximum film thickness of a polysilicon film lying on the side wall of each of the trenches is set to t, the opening width Wa' of the element isolating trench and the opening width Wb' of the substrate potential setting trench satisfies a condition that (Wa'-2t)<(Wb'-2t) and Wa'>2t. A silicon oxide film covers the entire portion of the internal surface of the element isolating trench and covers the internal surface of the substrate potential setting trench except the bottom portion thereof. Therefore, the polysilicon film in the element isolating trench is set in the electrically floating state and the polysilicon film in the substrate potential setting trench is connected to the semiconductor substrate.

REFERENCES:
patent: 4924284 (1990-05-01), Beyer et al.
patent: 5045904 (1991-09-01), Kobayashi et al.
patent: 5065216 (1991-11-01), Suzuki et al.
patent: 5473186 (1995-12-01), Morita

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