Semiconductor device having a trench for device isolation fabric

Details Semiconductor device having a trench for device isolation fabric Semiconductor device having a trench for device isolation fabric

1997-06-13

1999-01-12

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438701, 438704, 438978, H01L 2176

Patent

active

058588590

ABSTRACT:
A device-isolating trench having a taper at its upper portion is formed in a silicon semiconductor substrate. Then, a silicon oxide film is formed on the inner wall of the trench and the surface of the semiconductor substrate near the trench by an oxidizing method, and polycrystalline silicon is buried in the trench.

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