Semiconductor device having a transparent electrode and amorphou

Details Semiconductor device having a transparent electrode and amorphou Semiconductor device having a transparent electrode and amorphou

1989-09-28

1992-02-25

Hille, Rolf

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 2, 357 67, 136256, 136258, H01L 2714

Patent

active

050917641

ABSTRACT:
A semiconductor device having a transparent electrode comprising SnO.sub.2, at least one semiconductor layer and a back electrode on a glass substrate wherein the dopant density of the transparent electrode is not more than 0.5 weight %, so that light absorption in the transparent electrode is lowered.

REFERENCES:
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patent: 4500743 (1985-02-01), Hayashi et al.
patent: 4559552 (1985-12-01), Yamazaki
patent: 4591892 (1986-05-01), Yamazaki
patent: 4694116 (1987-09-01), Hayashi et al.
patent: 4703337 (1987-10-01), Yamazaki
patent: 4788582 (1988-11-01), Yamamoto
patent: 4900370 (1990-02-01), Itoga et al.
Thin Solid Films, vol. 88, No. 2, Feb. 1982, pp. 93-100, "Dopant Effects in Sprayed Tin Oxide Films", E. Shanthi et al.
European Search Report, EP 89 11 7934.

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