Semiconductor device having a time delay function

Details Semiconductor device having a time delay function Semiconductor device having a time delay function

1989-02-23

1990-08-07

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307581, 307605, H03K 19094

Patent

active

049470647

ABSTRACT:
A delay circuit for a semiconductor integrated circuit having an unvaried delay time without the deterioration of a signal propagation characteristic under the influence of a voltage source and an ambient temperature. The semiconductor device includes a first complementary metal-oxide-semiconductor (CMOS) inverter including a first P-channel transistor and a first N-channel transistor serially connected with said first P-channel transistor, a first junction field effect transistor (JFET) connected between a source of said first P-channel transistor and a first voltage source terminal, a gate of said first N-channel JFET being connected to the first voltage source terminal, a second JFET connected between a source of said first N-channel transistor and a second voltage source terminal, a gate of said second JFET being connected to the second voltage source terminal, a second CMOS inverter including a second P-channel transistor and a second N-channel transistor serially connected to said second P-channel transistor, a third JFET connected between a source of said second P-channel transistor and the first voltage source terminal, a gate of said third JFET being connected to the first voltage source terminal, and a fourth JFET connected between a source of said second N-channel transistor and the second voltage source terminal, a gate of said fourth JFET being connected to the second voltage source terminal, wherein drains of said first P-channel and N-channel transistors are connected to gates of said second P-channel and N-channel transistors.

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