Semiconductor device having a through electrode with a low...

Details Semiconductor device having a through electrode with a low... Semiconductor device having a through electrode with a low...

2006-12-11

2010-06-08

Chambliss, Alonzo (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE21175, C257SE21575, C257SE21597, C257SE23011, C438S622000, C438S637000

Reexamination Certificate

active

07732926

ABSTRACT:
A method of manufacturing a through electrode. While using at least a first conductive film for a gate electrode as a mask, an inner trench and a peripheral trench is formed. The Inner trench is provided for an inner through electrode having a columnar semiconductor. The peripheral trench is provided for a peripheral through electrode around an annular semiconductor surrounding the inner trench. The inner trench and the peripheral trench are filled with a through electrode insulation film and a through electrode conductive film, respectively, to form an inner through electrode and a peripheral through electrode.

REFERENCES:
patent: 7323785 (2008-01-01), Uchiyama
patent: 8-78699 (1996-03-01), None
patent: 2002-289623 (2002-10-01), None
patent: 2003-17558 (2003-01-01), None
patent: 2004-228308 (2004-08-01), None
patent: 2004-273483 (2004-09-01), None
patent: 2005-94044 (2005-04-01), None

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