Semiconductor device having a thin-film transistor and process

Details Semiconductor device having a thin-film transistor and process Semiconductor device having a thin-film transistor and process

1992-05-19

1993-08-31

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257316, 257368, 257401, 257900, 437106, 437233, 437234, 437235, H01L 2701, H01L 24469

Patent

active

052411931

ABSTRACT:
A semiconductor device having a thin-film transistor (22) and a process for making the device. The semiconductor device includes a substrate (11) having a principal surface. A gate electrode (29) overlies the principal surface and a gate dielectric layer (23) overlies the gate electrode (29). A conductive channel interface layer (25) overlies the upper surface of the gate electrode (29) and is spaced apart from the gate electrode (29) by the gate dielectric layer (23). A conductive thin-film layer (57) overlies the gate electrode (29) and forms a metallurgical contact to the channel interface layer (25). Remaining portions of the thin-film overlie the principal surface and form source and drain regions (63, 65) of the thin-film transistor (22). The thin-film source and drain regions (63, 65) are formed by placing a diffusion barrier cap (60) over the channel portion (61) of the thin-film layer (57) and introducing conductivity determining dopant into the thin-film layer (57). A silicide is formed in the thin-film source and drain regions (63, 65) by the depositing a refractory metal layer over the thin-film layer (57) and the diffusion barrier cap (60) and annealing the thin-film layer (57).

REFERENCES:
patent: 4603468 (1986-08-01), Lam
patent: 4633284 (1986-12-01), Hansell et al.
patent: 4980732 (1990-12-01), Okazawa
patent: 5083190 (1992-01-01), Pfiester
patent: 5100816 (1992-03-01), Rodder

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