Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2005-03-22
2005-03-22
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S758000, C257S786000
Reexamination Certificate
active
06870256
ABSTRACT:
In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.
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Co-pending related U.S. Appl. No. 09/924,293, filed Aug. 8, 2001; Inventors: Iwao Tahara, et al.
Aoki Yutaka
Mihara Ichiro
Wakabayashi Takeshi
Watanabe Katsumi
Casio Computer Co. Ltd.
Frishauf Holtz Goodman & Chick P.C.
Pham Long
Pizarro-Crespo Marcos D.
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