Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-09-20
2010-10-12
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S187000, C257SE29246
Reexamination Certificate
active
07812372
ABSTRACT:
A semiconductor device includes a support substrate and a semiconductor layer formed on the underlying substrate. The support substrate has its metal part formed by plating and extending across its entire thickness, whilst it has the other region made of semiconductor part. In particular, the region of the support substrate lying immediately below an active region is the metal part formed by plating. The region of the support substrate lying immediately below the region other than the active region is an inactive region made of semiconductor. The semiconductor device thus suppresses warping of a substrate otherwise caused by stress in the metal part formed by plating, and heat evolved due to the current in operation of the semiconductor device may be dissipated over the shortest path through the metal part having a higher thermal conductivity.
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Kolahdouzan Hajar
Monbleau Davienne
Oki Electric Industry Co. Ltd.
Rabin & Berdo PC
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