Semiconductor device having a superconductive wiring

Details Semiconductor device having a superconductive wiring Semiconductor device having a superconductive wiring

1988-06-16

1991-03-19

Hille, Rolf

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

357 71, 357 4, 357 22, 357 55, 357 61, 333 99S, H01L 2300, H01L 3900

Patent

active

050011081

ABSTRACT:
Connecting a superconductive material wiring layer to an electrode formed of normal metals (i.e. non-superconductive metals, such as aluminum), and connecting a part of a semiconductor region to the normal metal. The normal metal can contact the superconductive wiring layer via a barrier metal, such as TiN, at least at a side wall of the superconductive wiring layer which is essentially orthogonal to the layer wiring. Accordingly, even when the wiring layer is anisotropically superconductive mainly in a direction parallel to the plane of deposition, the superconductive property can be fully realized. The inventive structure prevents copper atoms in the superconductive material and silicon atoms in the semiconductor region of the IC from producing an undesirable alloy. This improves reliability of the IC operation, i.e. the semiconductor material as well as the superconductive material is not deteriorated.

REFERENCES:
patent: 4531982 (1985-07-01), Dubots
patent: 4593301 (1986-06-01), Inata et al.
patent: 4837609 (1989-06-01), Gurvitch et al.
"Anisotropic Properties of Superconducting Single-Crystal (La.sub.1-x SR.sub.x).sub.2 CuO.sub.4 ", Hidaka et al., J. Appl. Phys., vol. 4, Apr. 1987, pp. L377-L379.
High Tc Superconductivity of La-Ba-Cu Oxides. III-Electrical Resistivity Measurement, Uchida et al., 1/24/86.
Mutsuko Miyake, "Patent Abstracts of Japan", vol. 11, No. 33, Jan. 30, 1987, Japan, pp. 329-333.
Masaaki Aoki, "Patent Abstracts of Japan", vol. 9, No. 321, Dec. 17, 1985, Japan, pp. 53-55.

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