Semiconductor device having a substrate recess forming semicondu

Details Semiconductor device having a substrate recess forming semicondu Semiconductor device having a substrate recess forming semicondu

1991-11-21

1993-09-07

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

437 89, 437110, 257 52, 257 79, H01L 2120, H01L 2131

Patent

active

052432009

ABSTRACT:
A semiconductor device comprises a substrate, a recess formed on the substrate, a first conductive type semiconductor region and a second conductive type semiconductor region having an opposite conductive type to the first conductive type formed in the recess formed on the substrate, and wiring portions, wherein the surfaces of the substrate, the first conductive type semiconductor region and the second conductive type semiconductor region and are continuously on one plane, and the wiring portions connected respectively to the first conductive type semiconductor region and the second conductive type semiconductor region are formed on and in contact with the plane and are all substantially on the same plane and electrically independent from each other.

REFERENCES:
patent: 3411051 (1968-11-01), Kilby
patent: 4983539 (1991-01-01), Yamagata et al.
patent: 5045907 (1991-09-01), Solomon
patent: 5103851 (1992-04-01), Nishida et al.

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