Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2006-01-10
2006-01-10
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C257S500000, C257S501000, C257S506000
Reexamination Certificate
active
06984868
ABSTRACT:
A semiconductor device is disclosed involving a semiconductor substrate which contains a buried layer of a predetermined conductivity type as well as trenches deep enough to penetrate through the buried layer for element isolation purposes. Each of the trenches is formed in a boundary area between two regions with a potential difference developing therebetween, and an open-potential area is formed along the trench in the boundary area. This structure prevents leaks from occurring in areas interposed typically between an NPN region and an NMOS region in a BiCMOS semiconductor device, or any other area between two regions subject to two different potential levels.
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Fenty Jesse A.
Jackson Jerome
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