Semiconductor device having a stress transducer driven by a temp

Details Semiconductor device having a stress transducer driven by a temp Semiconductor device having a stress transducer driven by a temp

1993-02-24

1995-05-30

Chilcot, Jr., Richard E.

Measuring and testing

Fluid pressure gauge

With pressure and/or temperature compensation

73727, 73862623, G01L 1904

Patent

active

054191998

ABSTRACT:
A general object of the present invention is to provide a semiconductor device having a stress transducer in which a temperature dependency of sensitivity of the stress transducer which utilizes a piezo resistance effect to transduce stress into an electric signal, and variations in sensitivity of several semiconductor devices can be corrected. The semiconductor device includes a reference voltage source which has a temperature dependency in accordance with a temperature characteristic of sensitivity of the stress transducer which has an electrical bridge circuit exhibiting a piezo resistance effect, and a voltage transducer having resistances and an operational amplifier. Voltage transduced by the voltage transducer is adjusted so as to correct variations in sensitivity of several semiconductor devices.

REFERENCES:
patent: 4480478 (1984-11-01), Sato et al.
patent: 4604899 (1986-08-01), Yamada et al.
patent: 4765188 (1988-08-01), Krechmery et al.
patent: 4911016 (1990-03-01), Miyazaki et al.
patent: 5053692 (1991-10-01), Craddock
patent: 5253532 (1993-10-01), Kamens
Patent Abstracts of Japan, vol. 10, No. 340, E-455, Nov. 18, 1986, & JP-A-61-144844, Jul. 2, 1986.

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