Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1994-12-05
1997-01-28
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257903, 257 69, 257 66, H01L 2711
Patent
active
055980139
ABSTRACT:
A semiconductor device according to the invention includes a first conductivity type of driver transistor, a second conductivity type of load transistor formed on the driver transistor and an insulation layer formed between the driver transistor and the load transistor. The insulation layer is provided thereon with a depression area in which a channel region, a gate insulation layer and a gate electrode of the load transistor are formed.
REFERENCES:
patent: 5350933 (1994-09-01), Yoshihara
patent: 5352916 (1994-10-01), Kiyono et al.
patent: 5373170 (1994-12-01), Pfiester et al.
patent: 5404030 (1995-04-01), Kim et al.
Crane Sara W.
NEC Corporation
Williams Alexander Oscar
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