Semiconductor device having a silicon rich dielectric layer

Details Semiconductor device having a silicon rich dielectric layer Semiconductor device having a silicon rich dielectric layer

1993-06-28

1995-06-27

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257382, 257383, 257384, 257388, 257413, 257753, 257755, 257757, H01L 2934, H01L 2702, H01L 2348

Patent

active

054282446

ABSTRACT:
The adhesion between a metallic silicide film and a dielectric layer of a semiconductor device is improved. Formed on a silicon substrate is a gate dielectric layer formed on which is a metallic silicide film. A silicon dielectric layer of a rich-in-silicon-content type, which have a silicon content higher than a silicon content according to the stoichiometric composition formula, is deposited on the metallic silicide film. Because of this arrangement, a semiconductor device which is free from film peeling and which has an electrode wire with a low electrical resistance is achievable without decreasing the concentration of impurity at an electrode. If a passivation silicon oxide layer whose composition is close to a composition according to the stoichiometric composition formula is formed on the silicon oxide layer of a rich-in-silicon-content type, the degradation of the inside of an electrode, and the degradation of a gate oxide layer both caused by unwanted impurities from the outside can be prevented. This invention is available not only to a silicon oxide layer but also to a silicon nitride layer.

REFERENCES:
patent: 5248892 (1993-09-01), Van Roozendaal

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