Semiconductor device having a silicon oxide film containing fluo

Details Semiconductor device having a silicon oxide film containing fluo Semiconductor device having a silicon oxide film containing fluo

1994-12-22

1996-05-28

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257635, 257760, H01L 2358

Patent

active

055214240

ABSTRACT:
The semiconductor device has a multilayer structure wherein a substantially pure silicon dioxide film containing substantially no fluorine atom and a silicon dioxide film containing fluorine atoms are sequentially laminated on a substrate. Etching rate of a silicon dioxide film depends on a fluorine concentration in the film, so that a suitable etch selectivity of the silicon dioxide film containing fluorine atoms from the substantially pure silicon dioxide film can be obtained to form an oxide trench used for a trench interconnection and a via-hole used for a via-plug. The oxide film containing fluorine atoms has as good a quality as the silicon dioxide film not containing impurities has, thereby obtaining a superior characteristic of the semiconductor device. Addition of fluorine atoms reduces a specific permittivity to thereby obtain a higher speed.

REFERENCES:
patent: 5005067 (1991-04-01), Sakata et al.
T. Fukase et al., "A Margin-Free Contact Process Using An Al.sub.2 O.sub.3 Etch-Stop Layer for High Density Devices", IEDM 92-837, pp. 33.3.1-33.3.4.
R. D. J. Verhaar et al., "A 25 .mu.m.sup.2 Bulk Full CMOS SRAM Cell Technology with Fully Overlapping Contacts", IEDM 90-473, pp. 18.2.1-18.2.4.
B. Luther et al., "Planar Copper-Polyimide Back End of the Line Interconnections for ULSI Devices", VMIC Conference, Jun. 8-9, 1993, pp. 15-21.
D. Vender et al., "Selective Reactive Ion Etching of Phosphorus-Doped Oxide Over Undoped SiO.sub.2 ", J. Vac. Sci. Technol. A11(2), Mar./Apr. 1993, pp. 279-285.

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