Semiconductor device having a silicon on insulator structure

Details Semiconductor device having a silicon on insulator structure Semiconductor device having a silicon on insulator structure

1986-10-24

1989-02-28

Macon, Robert S.

H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

048090565

ABSTRACT:
A semiconductor device having an SOI structure comprises an insular single crystal silicon body formed on an insulator layer, a first region of a first type semiconductor and source and drain regions of a second type semiconductor provided in the insular single crystal silicon body so that the first region is provided between the source and drain regions, a second region of the first type semiconductor in contact with the first region formed along a side of the source and drain regions, and a contact region of the first type semiconductor having an impurity density higher than those of the first and second regions formed in contact with the second region, so that a fixed voltage can be applied to the first region via the contact region.

REFERENCES:
IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb., 1985, pp. 253-257; "Characteristics of MOSFET Prepared on Si/MgO.Al.sub.2 O.sub.3 /SiO.sub.2 /Si Structure".

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