Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With doping profile to adjust barrier height
Patent
1996-07-16
1998-09-29
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With doping profile to adjust barrier height
257485, H01L 27075, H01L 2947, H01L 29812, H01L 3107
Patent
active
058148744
ABSTRACT:
A semiconductor device having a semiconductor substrate and an epitaxial layer deposited thereon which supports a patterned insulating layer on which a metal layer is provided. To achieve a lower capacitance of the semiconductor device with unchanged forward voltage, the epitaxial layer consists of first and second epitaxial layers, the first epitaxial layer which adjoins the semiconductor substrate having a higher dopant concentration than and being of the same conductivity type as the second epitaxial layer.
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General Semiconductor Ireland
Ngo Ngan V.
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