Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1997-07-24
1999-08-31
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257664, 330286, 333246, H01L 2980
Patent
active
059457007
ABSTRACT:
A semiconductor device that has a structure wherein plural incremental circuits each of which is structured by a combination of a field effect transistor and a transmission line are connected and arranged in serial, in the arrangement of the above incremental circuits, the total length of the transmission lines of respective incremental circuits is longer than at least 1/16 of a wavelength of used microwave or millimeter-wave, and the number of arranged incremental circuits is numerous, as a result, the above transmission lines have a function as a distributed-constant line.
REFERENCES:
patent: 4456888 (1984-06-01), Ayasli
patent: 4733195 (1988-03-01), Tserng et al.
patent: 4973918 (1990-11-01), Schindler
patent: 5177381 (1993-01-01), Friesen et al.
patent: 5546049 (1996-08-01), Wen et al.
patent: 5689210 (1997-11-01), Lange
Yoshitada Iyama et al.; Distributed Type FET T/R. Switch vol.J79-C-I No. 8 pp. 330-338; Aug. 1996.
Microwave Switching; pp. 66, 68, 70.
Crane Sara
NEC Corporation
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