Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1993-09-27
1999-07-13
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257438, 257447, 257460, 257446, 257448, 257347, 257914, 257466, 257463, 257443, H01L 2936, H01L 27144, H01L 310392, H01L 31078
Patent
active
059230711
ABSTRACT:
A semiconductor substrate having a silicon-on-insulator structure may achieve superior performance by utilizing a low oxygen content monocrystalline silicon thin film layer for device formation. A supporting substrate, which may comprise a transparent material, such as quartz, or which may be silicon, has an insulating film disposed thereover. The insulating film preferably has a lower diffusion coefficient with respect to impurities than the monocrystalline silicon thin film, which is provided thereover. In accordance with this structure, oxygen particles are not introduced into the monocrystalline thin film and the thin film has a low oxygen concentration to maximize the minority carrier lifetime, enhance device performance characteristics, and prevent the occurrence of latch up.
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Guay John
Seiko Instruments Inc.
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