Semiconductor device having a second insulating layer which incl

Details Semiconductor device having a second insulating layer which incl Semiconductor device having a second insulating layer which incl

1997-04-02

1998-12-15

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257760, H01L 2358

Patent

active

058501029

ABSTRACT:
This invention is related to a metallization of Cu.
The semiconductor device comprises a first insulating layer having a groove in a surface thereof, a second insulating layer on a surface of the groove, made of a material having a low density of crystal defects in comparison with that of the first insulating layer, and a wiring layer buried in the groove, surrounded by the second insulating layer.

REFERENCES:
patent: 5521424 (1996-05-01), Ueno et al.
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5661334 (1997-08-01), Akram

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