Semiconductor device having a Schottky junction and method of ma

Details Semiconductor device having a Schottky junction and method of ma Semiconductor device having a Schottky junction and method of ma

1975-02-07

1976-01-27

Edlow, Martin H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 16, 357 23, 427 84, H01L 2948, H01L 2956

Patent

active

039355861

ABSTRACT:
A semiconductor device having a Schottky junction formed by providing a semiconductor body at least two metal layers one on top of the other which can each form a Schottky barrier with the semiconductor, in which, according to the invention, the formed Schottky diode has a higher barrier than each of the metals individually relative to the semiconductor, by heating the assembly above 400.degree.C. Preferably nickel or cobalt is first provided and thereon aluminum, and heating is carried out at 500.degree.C.

REFERENCES:
patent: 3636417 (1972-01-01), Kimura
patent: 3669730 (1972-06-01), Lepselter
patent: 3767984 (1973-10-01), Shinoda
Sze, Physics of Semiconductor Devices, Wiley & Son, N.Y., 1969, pp. 366-367.

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