Semiconductor device having a schottky film with a vertical gap

Details Semiconductor device having a schottky film with a vertical gap Semiconductor device having a schottky film with a vertical gap

1998-05-29

1999-07-20

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257283, 257486, 438422, 438573, 438578, H01L 29812

Patent

active

059259027

ABSTRACT:
In a semiconductor device, a gate electrode is formed by sequentially forming a Schottky metal film, a barrier metal film, and a low-resistance metal film from the lower side. The Schottky metal film or barrier metal film has a gap in a lower gate vertical portion. The gap is closed at its upper and lower portions. The overlaying low-resistance metal film does not extend into the lower gate vertical portion. A method for this semiconductor device is also disclosed.

REFERENCES:
patent: 4618510 (1986-10-01), Tan

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