Semiconductor device having a Schottky decoupling diode

Details Semiconductor device having a Schottky decoupling diode Semiconductor device having a Schottky decoupling diode

1989-12-13

1991-07-09

James, Andrew J.

357 14, 357 41, 357 47, 357 51, H01L 2948, H01L 2992, H01L 2702

Patent

active

050310062

ABSTRACT:
A semiconductor device includes at least one field effect transistor integrated monolithically on a substrate with a decoupling diode between a d.c. supply conductor and a ground conductor. The transistor is preferably a MESFET formed in a first semiconductor layer of the n-type preferably made of a III-V material. According to the invention, the decoupling diode is constituted by the ground conductor forming a Schottky junction of large surface area polarized in the opposite sense with a second semiconductor layer of the n-type, the supply conductor being resistively connected to the second semiconductor layer. According to a preferred embodiment, the second layer also comprises the resistive load of the transistor.

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Statz, "Fabricating Field Effect Transistors", IBM Technical Disclosure Bulletin, vol. 11, No. 4, Sep. 1968.

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