Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Patent
1997-05-22
1998-11-17
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
372 45, 372 46, H01S 319, H01L 31038, H01L 310336, H01L 31072
Patent
active
058380280
ABSTRACT:
The invention provides a semiconductor device having a structure wherein a layer comprising at least Al.sub.W Ga.sub.1-W As is formed on a substrate and a second etching stop layer, a first etching stop layer and a layer comprising Al.sub.Y Ga.sub.1-Y As are deposited on the layer comprising Al.sub.W Ga.sub.1-W As in the described order, with a portion of the layer comprising Al.sub.Y G.sub.1-Y As and a portion of the first etching stop layer being removed. This structure enables a desired ridge shape to be fabricated with good quality and allows for free selection of the Al mixed crystal ratio of the layer to be etched, and makes it possible to form the re-growth interface of GaAs. Thus, the qualty of crystal of the re-grown portion can be improved.
REFERENCES:
patent: 5155738 (1992-10-01), Ijichi et al.
patent: 5255279 (1993-10-01), Takahashi et al.
patent: 5357535 (1994-10-01), Shima et al.
patent: 5386428 (1995-01-01), Thornton et al.
patent: 5446753 (1995-08-01), Yoshida
Fujimori Toshinari
Gotoh Hideki
Horie Hideyoshi
Nagao Satoru
Giordana Adriana
Mitsubishi Chemical Corporation
Thomas Tom
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