Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Reexamination Certificate
2005-04-19
2005-04-19
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
C438S226000, C438S357000, C438S363000, C438S413000, C438S416000
Reexamination Certificate
active
06881641
ABSTRACT:
An epitaxially grown channel layer is provided on a well structure after ion implantation steps and heat treatment steps are performed to establish a required dopant profile in the well structure. The channel layer may be undoped or slightly doped, as required, so that the finally obtained dopant concentration in the channel layer is significantly reduced compared to a conventional device to thereby provide a retrograde dopant profile in a channel region of a field effect transistor. Additionally, a barrier diffusion layer may be provided between the well structure and the channel layer to reduce up-diffusion during any heat treatments carried out after the formation of the channel layer. The final dopant profile in the channel region may be adjusted by the thickness of the channel layer, the thickness and the composition of the diffusion barrier layer and any additional implantation steps to introduce dopant atoms in the channel layer.
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Horstmann Manfred
Stephan Rolf
Wieczorek Karsten
Advanced Micro Devices , Inc.
Nelms David
Tran Long
Williams Morgan & Amerson P.C.
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