Semiconductor device having a resistor region with an enhanced b

Details Semiconductor device having a resistor region with an enhanced b Semiconductor device having a resistor region with an enhanced b

1985-04-30

1985-12-31

James, Andrew J.

357 20, 357 48, 357 51, 357 52, 357 47, H01L 2990

Patent

active

045624518

ABSTRACT:
The sharp convex corners of a resistor region in a semiconductor body are typically "weak points" at which avalanche breakdowns are prone to occur due to the small space charge regions at such corners and the correspondingly concentrated electric fields. To avoid this an additional region of the same conductivity type is formed in the semiconductor body opposite each convex corner and spaced therefrom a distance such that the space charge region expanding outwardly from a corner zone as the reverse-bias voltage is increased reaches the associated additional region before any breakdown occurs. When the additional region is so reached it also becomes reverse-biased, and the resulting additional space charge region merges with that from the corner zone to provide an additive effect. The shape of the additional region may be complementary to that of the corner zone, or it may be circularly shaped and disposed radially outwardly from the corner zone.

REFERENCES:
patent: 3538398 (1970-11-01), Whiting
patent: 4314269 (1982-02-01), Fujiki
patent: 4361846 (1982-11-01), Tsukuba

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