Semiconductor device having a regrowth crystal region

Details Semiconductor device having a regrowth crystal region Semiconductor device having a regrowth crystal region

1998-05-05

2000-09-19

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438735, 257192, H01L 21302, H01L 21451

Patent

active

061211532

ABSTRACT:
A method of fabricating a compound semiconductor device includes a step of removing a semiconductor layer by an etching process to expose an upper major surface of an underlying semiconductor layer, followed by a growth of another semiconductor layer of the p-type on the surface thus exposed, wherein the exposed surface is cleaned by a flushing of a gaseous metal organic compound containing a group V element for removing impurities therefrom and further doping the exposed surface to the p-type.

REFERENCES:
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patent: 4855249 (1989-08-01), Akasaki et al.
patent: 5068756 (1991-11-01), Morris et al.
patent: 5164359 (1992-11-01), Calviello et al.
patent: 5212113 (1993-05-01), Azoulay et al.
patent: 5235210 (1993-08-01), Inoue
patent: 5311046 (1994-05-01), Mihashi

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