Semiconductor device having a regrowth crystal region

Details Semiconductor device having a regrowth crystal region Semiconductor device having a regrowth crystal region

1995-08-21

1998-10-06

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257280, H01L 2990, H01L 31112

Patent

active

058180788

ABSTRACT:
A method of fabricating a compound semiconductor device includes a step of removing a semiconductor layer by an etching process to expose an upper major surface of an underlying semiconductor layer, followed by a growth of another semiconductor layer of the p-type on the surface thus exposed, wherein the exposed surface is cleaned by a flushing of a gaseous metal organic compound containing a group V element for removing impurities therefrom and further doping the exposed surface to the p-type.

REFERENCES:
patent: 5235210 (1993-08-01), Inoue

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