Semiconductor device having a region of a material which is...

Details Semiconductor device having a region of a material which is... Semiconductor device having a region of a material which is...

2005-06-07

2005-06-07

Mai, Anh Duy (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S749000

Reexamination Certificate

active

06903461

ABSTRACT:
An ultraviolet sensitive material may be formed within a semiconductor structure covered with a suitable hard mask. At an appropriate time, the underlying ultraviolet sensitive material may be exposed to ultraviolet radiation, causing the material to exhaust through the overlying hard mask. As a result, an air gap may be created having desirable characteristics as a dielectric.

REFERENCES:
patent: 6159842 (2000-12-01), Chang et al.
patent: 6306754 (2001-10-01), Agarwal
patent: 2002/0158337 (2002-10-01), Babich et al.

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